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TN5335 - N-Channel Vertical DMOS FET

Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Features

  • Low threshold.
  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.
  • Complementary N- and P-channel devices.

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Datasheet Details

Part number TN5335
Manufacturer Supertex Inc
File Size 657.36 KB
Description N-Channel Vertical DMOS FET
Datasheet download datasheet TN5335 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage ►► Complementary N- and P-channel devices Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches ►► General purpose line drivers ►► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
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