Datasheet Details
- Part number
- F6N60
- Manufacturer
- Suntac
- File Size
- 231.29 KB
- Datasheet
- F6N60-Suntac.pdf
- Description
- IRF6N60
F6N60 Description
! GENERAL .
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
F6N60 Features
* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature
IRF6N60
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Front View
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