Datasheet Details
| Part number | ST3413 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 164.86 KB |
| Description | P Channel Enhancement Mode MOSFET |
| Datasheet |
 ST3413_StansonTechnology.pdf
|
| Part number | ST3413 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 164.86 KB |
| Description | P Channel Enhancement Mode MOSFET |
| Datasheet |
ST3413_StansonTechnology.pdf
|
ST3413 The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount
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