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ST2318 - N-Channel Enhancement Mode MOSFET

The ST2318 by Stanson Technology is a N-Channel Enhancement Mode MOSFET. Below is the official datasheet preview.

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Official preview page of the ST2318 N-Channel Enhancement Mode MOSFET datasheet (Stanson Technology).

Datasheet Details

Part number ST2318
Manufacturer Stanson Technology
File Size 313.90 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST2318-StansonTechnology.pdf
Additional preview pages of the ST2318 datasheet.

ST2318 Product details

Description

ST2318 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

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