Datasheet4U Logo Datasheet4U.com

SSS2309 P-Channel MOSFET

SSS2309 Description

SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 130 @VGS = -4.5V -20V -2.3A 190 @VGS = -2.5V G S D SOT-23 .

SSS2309 Features

* Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -20 + - 10 -2.3 -

📥 Download Datasheet

Preview of SSS2309 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SSS2N60 - N-CHANNEL MOSFET (Tuofeng Semiconductor)
  • SSS2N60A - Advanced Power MOSFET (Fairchild Semiconductor)
  • SSS2N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
  • SSS1004 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
  • SSS1004A7 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
  • SSS1004AL - MOSFET (Silikron)
  • SSS1004L - MOSFET (Silikron)
  • SSS10N60 - N-CHANNEL MOSFET (Tuofeng)

📌 All Tags

P-Channel MOSFET South Sea Semiconductor
South Sea Semiconductor SSS2309-like datasheet