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CXK582000YM - 262144-word X 8-bit High Speed CMOS Static RAM

Download the CXK582000YM datasheet PDF. This datasheet also covers the CXK variant, as both devices belong to the same 262144-word x 8-bit high speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed and board package line-up.

Features

  • Fast access time (Access time) -85LL 85ns (Max. ) -10LL 100ns (Max. ).
  • Low standby current 40µA (Max. ).
  • Low data retention current 24µA (Max. ).
  • Single +5V supply: 4.5V to 5.5V.
  • Low voltage date retention : 2.0V (Min. ).
  • Broad package line-up CXK582000TM/YM 8mm × 20mm 32 pin TSOP Package CXK582000M 525mil 32 pin SOP Package Function 262144 word x 8 bit static RAM Structure Silicon gate CMOS IC Preliminary CXK582000YM 32 pin TSOP (PIastic) For.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CXK-5820.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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CXK5816M High Speed CMOS Static RAM Sony
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Other Datasheets by Sony Semiconductor Solutions

Part Number Description
CXK582000M 262144-word X 8-bit High Speed CMOS Static RAM
CXK582000TM 262144-word X 8-bit High Speed CMOS Static RAM
CXK58256M 32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM
CXK58256P 32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM
CXK58257AM 32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXK582000TM/YM/M -85LL/10LL 262144-word × 8-bit High Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package line-up. The CXK582000TM/YM/M is a suitable RAM for portable equipment with battery back up. Features • Fast access time (Access time) -85LL 85ns (Max.) -10LL 100ns (Max.) • Low standby current 40µA (Max.) • Low data retention current 24µA (Max.) • Single +5V supply: 4.5V to 5.5V. • Low voltage date retention : 2.0V (Min.
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