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CXK582000TM - 262144-word X 8-bit High Speed CMOS Static RAM

Download the CXK582000TM datasheet PDF (CXK included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 262144-word x 8-bit high speed cmos static ram.

Description

The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed and board package line-up.

Features

  • Fast access time (Access time) -85LL 85ns (Max. ) -10LL 100ns (Max. ).
  • Low standby current 40µA (Max. ).
  • Low data retention current 24µA (Max. ).
  • Single +5V supply: 4.5V to 5.5V.
  • Low voltage date retention : 2.0V (Min. ).
  • Broad package line-up CXK582000TM/YM 8mm × 20mm 32 pin TSOP Package CXK582000M 525mil 32 pin SOP Package Function 262144 word x 8 bit static RAM Structure Silicon gate CMOS IC Preliminary CXK582000YM 32 pin TSOP (PIastic) For.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CXK-5820.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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CXK582000TM/YM/M -85LL/10LL 262144-word × 8-bit High Speed CMOS Static RAM Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package line-up. The CXK582000TM/YM/M is a suitable RAM for portable equipment with battery back up. Features • Fast access time (Access time) -85LL 85ns (Max.) -10LL 100ns (Max.) • Low standby current 40µA (Max.) • Low data retention current 24µA (Max.) • Single +5V supply: 4.5V to 5.5V. • Low voltage date retention : 2.0V (Min.
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