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DME2050-000 - Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices

Download the DME2050-000 datasheet PDF. This datasheet also covers the DME2851-000 variant, as both devices belong to the same silicon beam-lead schottky mixer diode bondable beam-lead devices family and are provided as variant models within a single manufacturer datasheet.

Description

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz.

The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.

Features

  • Low 1/f noise.
  • Low intermodulation distortion.
  • Statistical Process Control wafer fabrication Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DME2851-000-Skyworks.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DME2050-000
Manufacturer Skyworks
File Size 734.17 KB
Description Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices
Datasheet download datasheet DME2050-000 Datasheet

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Other Datasheets by Skyworks

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DME2050-222 Silicon Beam-Lead Schottky Mixer Diodes
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Full PDF Text Transcription

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DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diode (Singles, Pairs, and Quads) Bondable Beam-Lead Devices Applications  Microwave Integrated Circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion  Statistical Process Control wafer fabrication Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Description Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.
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