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DDB2265-230 - Silicon Schottky Barrier Diodes

Download the DDB2265-230 datasheet PDF. This datasheet also covers the DDB2503-220 variant, as both devices belong to the same silicon schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

Description

Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DDB2503-220-Skyworks.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DDB2265-230
Manufacturer Skyworks
File Size 588.43 KB
Description Silicon Schottky Barrier Diodes
Datasheet download datasheet DDB2265-230 Datasheet

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Other Datasheets by Skyworks

Part Number Description
DDB2265-220 Silicon Schottky Barrier Diodes
DDB2265-250 Silicon Schottky Barrier Diodes
DDB2265-000 Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
DDB2503-000 Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
DDB2503-220 Silicon Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
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