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SE6050B - N-Channel MOSFET

Download the SE6050B datasheet PDF. This datasheet also covers the SE6050B-Sino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • For a single MOSFET.
  • VDS = 60V.
  • RDS(ON) = 11mΩ @ VGS=10V Pin configurations See Diagram below G D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range TO-252 Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 60 ±20 50 220 80 0.53 115 -55 to.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SE6050B-Sino-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SE6050B
Manufacturer Sino-IC
File Size 430.10 KB
Description N-Channel MOSFET
Datasheet download datasheet SE6050B Datasheet

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Full PDF Text Transcription

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SE6050B N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET  VDS = 60V  RDS(ON) = 11mΩ @ VGS=10V Pin configurations See Diagram below G D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range TO-252 Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 60 ±20 50 220 80 0.53 115 -55 to 175 Units V V A W W/℃ mJ ℃ Typ Max Units - 1.
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