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SE3035, SE3035-Sino N-Channel MOSFET

SE3035 Description

Apr 2015 SE3035 N-Channel Enhancement-Mode MOSFET Revision: A General .
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM. Simple Drive.

SE3035 Features

* For a single MOSFET
* VDS = 30V
* RDS(ON) = 5.5mΩ @ VGS=10
* RDS(ON) = 9.5mΩ @ VGS=4.5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junct

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SE3035, SE3035-Sino. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SE3035, SE3035-Sino
Manufacturer
Sino-IC
File Size
612.51 KB
Datasheet
SE3035-Sino-IC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SE3035, SE3035-Sino.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Sino-IC
Sino-IC SE3035-like datasheet