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SE150100, SE150100-Sino N-Channel MOSFET

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Description

SE150100 N-Channel Enhancement-Mode MOSFET Revision: A General .
Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage.

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This datasheet PDF includes multiple part numbers: SE150100, SE150100-Sino. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
SE150100, SE150100-Sino
Manufacturer
Sino-IC
File Size
408.73 KB
Datasheet
SE150100-Sino-IC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SE150100, SE150100-Sino.
Please refer to the document for exact specifications by model.

Features

* For a single MOSFET
* VDS = 150V
* RDS(ON) = 9.8mΩ @ VGS=10V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single pulse avalanche energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS

Applications

* Simple Drive Requirement
* Small Package Outline

SE150100 Distributors

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