SMI120N32E2 IGBT

Silikron

SMI120N32E2 Description

Main Product Characteristics: VDS 1200V ID 87A RDS(on) 32mΩ 1 234 .

SMI120N32E2 Features

* TO - 247- 4L
* High blocking voltage with low on-resistance
* High speed switching,very low switching losses
* High blocking voltage with low on-resistance
* Fast intrinsic diode with low reverse recovery (Qrr)
* Temperature independent turn-off switching losses Applicati

SMI120N32E2 Applications

* On-board charger/PFC
* EV battery chargers
* Booster/DC-DC converter
* Switch mode power supplies Absolute Max Rating: Symbol VDS VGS,max VGS,op ID ID(puls) PD TJ TSTG TL Parameter Drain Source Voltage Gate Source Voltage,Absolute Maximum Values Gate Source Voltage,Recommended

📥 Download Datasheet

SMI120N32E2 Datasheet Preview — Preview of SMI120N32E2 PDF

Datasheet Details

Part number: SMI120N32E2
Manufacturer: Silikron
File Size: 1.98 MB
Datasheet: SMI120N32E2-Silikron.pdf
Description: IGBT

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IGBT Silikron

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