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SSS1206H Datasheet - Silikron Semiconductor

SSS1206H, N-Channel enhancement mode power field effect transistors

                                 Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ①

Features

* TO-247 
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSS1206H-SilikronSemiconductor.pdf

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Datasheet Details

Part number:

SSS1206H

Manufacturer:

SilikrON Semiconductor ↗

File Size:

333.55 KB

Description:

N-channel enhancement mode power field effect transistors.

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