SSS1206 Datasheet - Silikron Semiconductor

SSS1206, N-Channel enhancement mode power field effect transistors

Main Product Characteristics VDSS RDS(on) 120V 4mΩ (typ.) ID 180A ①

Features

* TO-220
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

Datasheet Details

Part number:

SSS1206

Manufacturer:

File Size:

465.02 KB

Description:

N-channel enhancement mode power field effect transistors.

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