SSPL2015F Datasheet - Silikron Semiconductor

SSPL2015F, N-Channel enhancement mode power field effect transistors

Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ①

Features

* TO-220F
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

Datasheet Details

Part number:

SSPL2015F

Manufacturer:

File Size:

504.32 KB

Description:

N-channel enhancement mode power field effect transistors.

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