SSF4606 Datasheet - Silikron Semiconductor

SSF4606, MOSFET

DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.
The complementary MOSFET may be used

Features

* N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -6A RDS(ON) < 58mΩ @ VGS=-4.5V RDS(ON) < 35mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package SSF4606 N-channe

SSF4606-SilikronSemiconductor.pdf