VQ1006 Datasheet | Siliconix

VQ1006 SERIES N-Channel Enhancement-Mode MOS Transistor Arrays PRODUCT SUMMARY PART V(BR)OSS r OS(ON) 10 NUMBER (V) (11) (A) PACKAGE VQ1006J Plastic VQ1006P 0.40 Side Braze Performance Curves: VNDQ09 (See Section 7) 14-PIN DIP SIDE BRAZE ~ "." . .) :. "" " 14-PIN PLASTIC ~Siliconix ~ incorporated TOP VIEW Oual-In-Line Package = ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current. Pulsed Drain Current 1 TA= 25DC TA= 100DC Power Dissipation - Single TA= 25DC TA= 100DC Power Dissipation - Quad TA= 25DC TA=100DC Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10...