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VN10KM, VN10KE N-Channel Enhancement-Mode MOS Transistors

VN10KM Description

~Siliconix .,1;11 incorporated VN0610L, VN10KE, VN10KM N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER .

VN10KM Features

* internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL. TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGs=OV,10=100.l1A Vos = VGS, 10 = 1 mA Gate-Body Leakage Zero Ga

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This datasheet PDF includes multiple part numbers: VN10KM, VN10KE. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
VN10KM, VN10KE
Manufacturer
Siliconix
File Size
99.24 KB
Datasheet
VN10KE-Siliconix.pdf
Description
N-Channel Enhancement-Mode MOS Transistors
Note
This datasheet PDF includes multiple part numbers: VN10KM, VN10KE.
Please refer to the document for exact specifications by model.

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N-Channel Enhancement-Mode MOS Transistors Siliconix
Siliconix VN10KM-like datasheet