SSM9980M Datasheet - Silicon Standard

SSM9980M, Dual N-channel Enhancement-mode Power MOSFET

SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics Description D2 D

Applications

* and is well suited for low voltage applications such as DC/DC converters. This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source

SSM9980M-SiliconStandard.pdf