Description
D
G S
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Ran