SSM2305AGN Datasheet - Silicon Standard

SSM2305AGN, P-channel Enhancement-mode Power MOSFET

SSM2305AGN P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant.
DESCRIPTION D G

Applications

* This device is suitable for low-voltage applications such as DC/DC converters and and general switching applications. SOT-23-3 -30V 80mΩ -3.2A S G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Cont

SSM2305AGN-SiliconStandard.pdf