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SGT10T60SD1F - 600V FIELD STOP IGBT

Download the SGT10T60SD1F datasheet PDF. This datasheet also covers the SGT10T60SD1S variant, as both devices belong to the same 600v field stop igbt family and are provided as variant models within a single manufacturer datasheet.

Description

The SGT10T60SD1S/F field stop IGBT adopts Silan Field Stop III technology,

Features

  • low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGT10T60SD1S-SilanSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGT10T60SD1F
Manufacturer Silan Semiconductors
File Size 382.57 KB
Description 600V FIELD STOP IGBT
Datasheet download datasheet SGT10T60SD1F Datasheet

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Other Datasheets by Silan Semiconductors

Part Number Description
SGT10T60SD1S 600V FIELD STOP IGBT
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Full PDF Text Transcription

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Silan Microelectronics SGT10T60SD1S/F_Datasheet 10A, 600V FIELD STOP IGBT DESCRIPTION The SGT10T60SD1S/F field stop IGBT adopts Silan Field Stop III technology, features low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields. FEATURES  10A, 600V, VCE(sat)(typ.)=1.65V@IC=10A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 1 3 TO-263-2L 123 TO-220F-3L NOMENCLATURE IGBT series SGT 10 T 60 S D X 1 S Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V Package D : TO-263; F:TO-220F-3L 1,2,3 : Version No.
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