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SCDP120R040NP4B - 1200V SiC MOS POWER TRANSISTOR

Silan Semiconductors

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Datasheet Details

Part number	SCDP120R040NP4B
Manufacturer	Silan Semiconductors
File Size	682.97 KB
Description	1200V SiC MOS POWER TRANSISTOR
Datasheet	SCDP120R040NP4B-SilanSemiconductors.pdf

SCDP120R040NP4B Product details

Description

SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology.

Features

66A, 1200V, RDS(on)(typ. )= 40m@VGS=15V.
Silicon Carbide technology.
Low switching loss.
Low reverse recovery charge.
Reduced requirement for heat dissipation.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant KEY.

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