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SVSP11N60TD2, SVSP11N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N60TD2 Description

Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

SVSP11N60TD2 Features

* 11A,600V, RDS(on)(typ. )=0.3@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SVSP11N60TD2, SVSP11N60DD2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SVSP11N60TD2, SVSP11N60DD2
Manufacturer
Silan Microelectronics
File Size
430.27 KB
Datasheet
SVSP11N60DD2-SilanMicroelectronics.pdf
Description
600V SUPER JUNCTION MOS POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: SVSP11N60TD2, SVSP11N60DD2.
Please refer to the document for exact specifications by model.

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600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
Silan Microelectronics SVSP11N60TD2-like datasheet