SVGQ046R8NLPD Datasheet - Silan Microelectronics

SVGQ046R8NLPD, 40V DUAL N-CHANNEL MOSFET

Silan Microelectronics SVGQ046R8NLPD_Datasheet 63A, 40V DUAL N-CHANNEL MOSFET .
SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

SVGQ046R8NLPD-SilanMicroelectronics.pdf

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Datasheet Details

Part number:

SVGQ046R8NLPD

Manufacturer:

Silan Microelectronics

File Size:

436.25 KB

Description:

40V DUAL N-CHANNEL MOSFET

Features

* AEC-Q101 qualified
* 63A, 40V, RDS(on)(typ. )=5.6m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Extreme dv/dt rated
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant
* Max. junction temperature: Tjmax. =175 ºC KEY PERFORMANCE PARAMET

SVGQ046R8NLPD Distributors

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SVGQ046R8NLPD 40V DUAL N-CHANNEL MOSFET Silan Microelectronics

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