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SVGQ046R8NLPD 40V DUAL N-CHANNEL MOSFET

SVGQ046R8NLPD Description

Silan Microelectronics SVGQ046R8NLPD_Datasheet 63A, 40V DUAL N-CHANNEL MOSFET .
SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

SVGQ046R8NLPD Features

* AEC-Q101 qualified
* 63A, 40V, RDS(on)(typ. )=5.6m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Extreme dv/dt rated
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant
* Max. junction temperature: Tjmax. =175 ºC KEY PERFORMANCE PARAMET

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40V DUAL N-CHANNEL MOSFET Silan Microelectronics
Silan Microelectronics SVGQ046R8NLPD-like datasheet