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SVF6N80D - 800V N-CHANNEL MOSFET

Description

SVF6N80D(K)(MJ) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 6A,800V, RDS(on)(typ. )=2.0@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 13 TO-252-2L 12 3 TO-262-3L.

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Datasheet Details

Part number SVF6N80D
Manufacturer Silan Microelectronics
File Size 279.72 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet SVF6N80D Datasheet

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Silan Microelectronics SVF6N80D(K)_Datasheet 6A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N80D(K)(MJ) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L FEATURES  6A,800V, RDS(on)(typ.)=2.
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