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SVF1N60D - 600V N-CHANNEL MOSFET

Download the SVF1N60D datasheet PDF (SVF1N60MJ included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 600v n-channel mosfet.

Description

SVFM/MJ/N/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 1A,600V,RDS(on)（typ. ）=8.2Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF1N60MJ-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF1N60D
Manufacturer Silan Microelectronics
File Size 529.17 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF1N60D Datasheet

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Full PDF Text Transcription

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SVF1N60M/MJ/N/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFM/MJ/N/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 1A,600V,RDS(on)（typ.）=8.2Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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