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SGT60U65FD1P7 - 650V FIELD STOP IGBT

This page provides the datasheet information for the SGT60U65FD1P7, a member of the SGT60U65FD1PN-SilanMicroelectronics 650V FIELD STOP IGBT family.

Description

The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop IV+ technology,

Features

  • low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields.

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Datasheet preview – SGT60U65FD1P7

Datasheet Details

Part number SGT60U65FD1P7
Manufacturer Silan Microelectronics
File Size 281.85 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGT60U65FD1P7 Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop IV+ technology, features low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields. FEATURES  60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E TO-3P TO-247-3L TO-3PN NOMENCLATURE IGBT series SGT 60 U 65 F D X 1 PF Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V ORDERING INFORMATION Part No.
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