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7N65FJD2, 7N65MJD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

7N65FJD2 Description

Silan Microelectronics SVS7N65D(F)(MJ)(FJ)D2_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

7N65FJD2 Features

* 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L
* 7A,650V, RDS(on)(typ. )=0.55@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Enhanced avalanche capability
* Extreme dv/dt rated
* High peak current capability 12 3 TO-220FJ-3L 1

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 7N65FJD2, 7N65MJD2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
7N65FJD2, 7N65MJD2
Manufacturer
Silan Microelectronics
File Size
276.40 KB
Datasheet
7N65MJD2-SilanMicroelectronics.pdf
Description
650V SUPER JUNCTION MOS POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: 7N65FJD2, 7N65MJD2.
Please refer to the document for exact specifications by model.

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650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
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