24N60FJD2 600V DP MOS POWER TRANSISTOR

Silan Microelectronics

Description

Silan Microelectronics SVS24N60F(FJ)(PN)(T)D2_Datasheet 24A, 600V DP MOS POWER TRANSISTOR GENERAL .
SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology.

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Datasheet Specifications

Part number: 24N60FJD2
Manufacturer: Silan Microelectronics
File Size: 344.40 KB
Datasheet: 24N60FJD2-SilanMicroelectronics.pdf
Description: 600V DP MOS POWER TRANSISTOR

Features

* 24A, 600V, RDS(on)(typ. )=0.14@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123

24N60FJD2 Distributors

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24N60FJD2 600V MOS POWER TRANSISTOR Silan Microelectronics

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