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HYS64V4200GU-8 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module

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Description

3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64(72)V4200GU HYS64(72)V8220GU PC66 & PC100 168 pin unbuffered DI.
100 Mhz 4M x 64 1 bank SDRAM module 100 MHz 4M x 72 1 bank SDRAM module 100 Mhz 8M x 64 2 bank SDRAM module 100 MHz 8M x 72 2 bank SDRAM module 100 M.

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Datasheet Specifications

Part number
HYS64V4200GU-8
Manufacturer
Siemens
File Size
76.09 KB
Datasheet
HYS64V4200GU-8_SiemensSemiconductorGroup.pdf
Description
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module

Features

* C100-323 -10 PC66 Unit Note min. max. min. max. min. max. Clock and Clock Enable Clock Cyc

Applications

* One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation Optimized for byte-write non-parity and ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification SDRAM Performance: -8 fCK tAC Clock frequency (max. ) Clock ac

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