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HYS64V2100GU-10 - 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module

Description

PC66 2M x 64 SDRAM module PC66 2M x 72 SDRAM module PC66 2M x 64 SDRAM COB module PC66 2M x 72 SDRAM COB module Pin Names A0-A10 A11 (BS) DQ0 - DQ63 CB0-CB7 RAS CAS WE CKE0 Address Inputs( RA0 ~ RA10 / CA0 ~ CA8) Bank Select Data Input/Output Check Bits (x72 organisation only) Row Address Strobe C

Features

  • d after power-up, then a Precharge All Banks command must be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin. 4. AC timing tests have V il = 0.4 V and V ih = 2.4 V with the timing referenced to the 1.4 V crossover point. The transition time is measured between V ih and Vil. All AC meas.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYS64V2100G 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
HYS64V2100GCU-10 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
HYS64V2200GU-10 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
HYS64V2200GU-8 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
HYS64V2200GU-8-3 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules HYS64V2100G(C)U-10 HYS72V2100G(C)U-10 • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications 1 bank 2M x 64, 2M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance: -10 fCK tAC Max. Clock frequency Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 ns @ CL=2 8 ns @ CL=3 • • • • • • • Single +3.3V(± 0.
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