HYB514405BJL-50, HYB - 1M x 4-Bit Dynamic RAM

Siemens

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HYB514405BJL-50 Datasheet Preview — This datasheet PDF includes multiple part numbers: HYB514405BJL-50, HYB. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	HYB514405BJL-50, HYB
Manufacturer	Siemens
File Size	1.33 MB
Description	1M x 4-Bit Dynamic RAM
Datasheet	HYB-5144.pdf
Note	This datasheet PDF includes multiple part numbers: HYB514405BJL-50, HYB. Please refer to the document for exact specifications by model.

HYB514405BJL-50 Product details

Description

EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 70 ns) Low Power EDO-DRAM (access time 50 ns) Low Power EDO-DRAM (access time 60 ns) Low Power EDO-DRAM (access time 70 ns) Semiconductor Group 2 HYB 514405BJ/BJL-50/-60/-70 1M x 4 EDO - DRAM Pin Configuration (top view) P-SOJ-26/20-5 Pin Names A0-A9 RAS CAS WE OE I/O1 - I/O4 Address Input Row Address Strobe Column Address Strobe Read/Write Input Output Enable Data Input/Output Power Supply (+ 5 V) Ground (0 V

Features

5 10 10.
ns ns ns ns ns CAS-before-RAS Counter Test Cycle CAS precharge time (CASbefore-RAS counter test cycle) tCPT 35.
40.
40.
ns Test Mode Write command setup time Write command hold time tWTS tWTH 10 10.
10 10.
10 10.
ns ns Capacitance TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; f = 1 MHz Parameter Input capacitance (A0 to A9) Input capacitance (RAS.

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Published: Apr 23, 2005 |