HYB5118165BJ-60 - 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

Siemens

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Datasheet Details

Part number	HYB5118165BJ-60
Manufacturer	Siemens
File Size	269.84 KB
Description	1M x 16-Bit Dynamic RAM 1k & 4k Refresh
Datasheet	HYB5118165BJ-60_SiemensSemiconductorGroup.pdf

HYB5118165BJ-60 Product details

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C.Semiconductor Group 2 HYB 5116(8)165BSJ-50/-60/-70 1M x 16-EDO DRAM P-SOJ-42-1 400 mil Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7 I/O8 N.C.N.C.WE RAS N.C.N.C.A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 HYB3118165BSJ 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 Vss I/O16 I/O15 I

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116165BJ-50 HYB 5116165BJ-60 HYB 5116165BJ-70 HYB 5118165BJ-50 HYB 5118165BJ-60 HYB 5118165BJ-70 Pin Names A0-A9 A0-A9 A0-A11 A0 to A7 RAS OE I/O1-I/O16 UCAS LCAS WE Row Address Inputs for HYB5118165BSJ Column Address Inputs for HYB5118165BSJ Row Address Inputs for HYB5116165BSJ Column Address Inputs for HYB5116165BSJ Row Address Strobe O.

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Published: Apr 23, 2005 |