HYB5116405BJ-70 - 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

Siemens

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Datasheet Details

Part number	HYB5116405BJ-70
Manufacturer	Siemens
File Size	323.80 KB
Description	4M x 4-Bit Dynamic RAM 2k & 4k Refresh
Datasheet	HYB5116405BJ-70_SiemensSemiconductorGroup.pdf

HYB5116405BJ-70 Product details

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C.Semiconductor Group 2 HYB5116(7)405BJ/BT-50/-60/-70 4M x 4-EDO DRAM P-SOJ-26/24 300 mil P-TSOPII-26/24 300 mil Vcc I/O1 I/O2 WE RAS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 1

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 5116405BJ-70 HYB 5116405BT-50 HYB 5116405BT-60 HYB 5116405BT-70 HYB 5117405BJ-50 HYB 5117405BJ-60 HYB 5117405BJ-70 HYB 5117405BT-50 HYB 5117405BT-60 HYB 5117405BT-70 Pin Names A0-A11 A0-A9 A0-A10 RAS OE I/O1-I/O4 CAS WE Row Address Inputs for HYB5116405 Column Address Inputs for HYB5116405 Row and Column A.

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Published: Apr 23, 2005 |