HYB5116400BJ-60 - 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

Siemens

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Datasheet Details

Part number	HYB5116400BJ-60
Manufacturer	Siemens
File Size	325.72 KB
Description	4M x 4-Bit Dynamic RAM 2k & 4k Refresh
Datasheet	HYB5116400BJ-60_SiemensSemiconductorGroup.pdf

HYB5116400BJ-60 Product details

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C.Semiconductor Group 2 HYB 5116400BJ/BT-50/-60/-70 4M x 4-DRAM Vcc I/O1 I/O2 WE RAS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 Vss I/O4 I/O3 CAS OE A9 A8 A7 A6 A5 A4 Vss P-SOJ-26/24 300 mil P-TSOPII-26/24 300 mil Pin Configuration Semiconductor Group 3 HYB 5116400BJ/BT-50/-60/-7

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116400BJ-50 HYB 5116400BJ-60 HYB 5116400BJ-70 HYB 5116400BT-50 HYB 5116400BT-60 HYB 5116400BT-70 Pin Names A0-A11 A0-A9 RAS OE I/O1-I/O4 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) not connected Ordering Code Q67.

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Published: Apr 23, 2005 |