HYB511000BJL-50 - 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM

Siemens

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Datasheet Details

Part number	HYB511000BJL-50
Manufacturer	Siemens
File Size	193.00 KB
Description	1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
Datasheet	HYB511000BJL-50_SiemensSemiconductorGroup.pdf

HYB511000BJL-50 Product details

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group 33 01.95 HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by 1-bit.The HYB 511000BJ/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user.

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for low power battery backup.

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Published: Apr 23, 2005 |