HYB39S64800, HYB39S64400 Datasheet - Siemens Semiconductor

HYB39S64800 64M-Bit Synchronous DRAM

LVTTL-version: HYB 39S64400AT-8 HYB 39S64400AT-8B HYB 39S64400AT-10 HYB 39S64800AT-8 HYB 39S64800AT-8B HYB 39S64800AT-10 HYB 39S64160AT-8 HYB 39S64160AT-8B HYB 39S64160AT-10 HYB 39S64xxx0ATL-8/-10 P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mi.

HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM High Performance: -8 fCKmax. tCK3 tAC3 tCK2 tAC2 125 8 6 10 6 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge Data Mask for Read / Write control (x4, x8) Data Mask for byte control (x16) Aut.

HYB39S64800 Features

* Mode Register Set (MRS) No Operation (NOP) Device Deselect (INHBT) Auto Refresh (REFA) Self Refresh Entry (REFS-EN) Self Refresh Exit (REFS-E

HYB39S64400_SiemensSemiconductor.pdf