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SFH483 - GaAlAs Infrared Emitter

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Vorwärtsgleichstrom, TC ≤ 25 °C Forward current Stoßstrom, tp = 10 µs, D = 0, TC = 25 °C Surge current Verlustleistung, TC = 25 °C Power dissipation Wärmewi

Features

  • Highly efficient GaAlAs LED Anode is electrically connected to the case High pulse power High reliability DIN humidity category in acc. with DIN 40040 GQG q Same package as BPX 63, BP 103, LD 242, SFH 464 q q q q q.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 ø0.45 Chip position 1 0.9 .1 1.1 .9 0 ø5.5 ø5.2 2.7 1 2.54 mm spacing 14.5 12.5 3.6 3.0 ø4.3 ø4.1 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g GET06625 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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