SFH480 Datasheet (Siemens Semiconductor Group) - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm

SFH480, GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm

SFH 481: Betriebs- und Lagertemperatur Operating and storage temperature range SFH 480, SFH 482: Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0

GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area ø5.6 ø5.3 5.3 14.5 5.0 12.5 7.4 6.6 Approx.

weight 0.5 g GEO06314 ø0.45 (2.7) Chip position Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 0 2.54 mm spacing welded 14.5 12.5 Approx.

weight 0.35 g Chip position (2.7) ø0.45 5.5 5.0 14.5 12.5 5.3

SFH480 Features

* q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481: Same package as BPX 43, BPY 63 q SFH 482: Same p