SFH4580 Datasheet (Siemens Semiconductor Group) - GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

SFH4580, GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.

10 mm T

GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 4580 SFH 4585 Chip position 4.5 7.5 3.9 5.5 2.7 2.3 2.05 R 1.95 2.7 2.4 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06960 14.7 13.1 Cathode 2.54 mm spacing 4.5 3.9 7.7 7.1 7.4 2.05 R 1.95 4.8 4.4 2.7 2.4 Chip position 4.5 3.9 8.0 -0.10.1 3.7 3.3 4.8 4.4 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06961 15.5 14.7 Cathode 2.54 mm spacing 4.5 3.9 7.7 7.1 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise spe

SFH4580 Features

* Fabricated in a liquid phase epitaxy process Suitable for surface mounting (SMT) Available on tape and reel Same package as photodiode SFH 2500/ SFH 2505 q High reliability q Spectral match with silicon photodetectors q q q q Applications q IR remote control of hi-fi and TV-sets, video tape recorde