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SFH4580 - GaAIAs Infrared Emitters

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.

Features

  • Fabricated in a liquid phase epitaxy process Suitable for surface mounting (SMT) Available on tape and reel Same package as photodiode SFH 2500/ SFH 2505 q High reliability q Spectral match with silicon photodetectors q q q q.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 4580 SFH 4585 Chip position 4.5 7.5 3.9 5.5 2.7 2.3 2.05 R 1.95 2.7 2.4 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06960 14.7 13.1 Cathode 2.54 mm spacing 4.5 3.9 7.7 7.1 7.4 2.05 R 1.95 4.8 4.4 2.7 2.4 Chip position 4.5 3.9 8.0 -0.1...0.1 3.7 3.3 4.8 4.4 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06961 15.5 14.7 Cathode 2.54 mm spacing 4.5 3.9 7.7 7.1 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group -0.15...0..
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