SFH4510 Datasheet (Siemens Semiconductor Group) - GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm

SFH4510, GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value * 40 + 85 85 5

GaAs-IR-Lumineszenzdioden (950 nm) GaAs Infrared Emitters (950 nm) SFH 4510 SFH 4515 2.7 2.3 2.05 R 1.95 2.7 2.4 Chip position 4.5 7.5 3.9 5.5 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06968 14.7 13.1 2.54 mm spacing -0.10.1 3.7 3.3 Cathode/ Collector 4.5 3.9 7.7 7.1 Chip position 8.0 7.4 15.5 14.7 4.5 3.9 2.05 R 1.95 (3.2) (R 2.8) (3.2) 6.0 5.4 GEO06969 4.8 4.4 SFH 4510 4.8 4.4 2.54 mm spacing SFH 4515 4.5 3.9 7.7 7.1 Cathode/ Collector Maße in mm, wenn nicht anders angegeben/Dimensions

SFH4510 Features

* q Fabricated in a liquid phase epitaxy process q Suitable for surface mounting (SMT) q Available on tape and reel q Same package as photodiode SFH 2500/ SFH 2505 and phototransistor SFH 3500/ SFH 3505 q High reliability q Spectral match with silicon photodetectors Anwendungen q IR-Fernsteuerung von