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Q62702-B664 - Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)

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BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 52-03W Marking Ordering Code I (white) Q62702-B664 Q62702- Pin Configuration 1=C 2=A - Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-04-1997 BBY 52-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C AC characteristics Diode capacitance CT 1.4 0.85 1.85 1.5 1.35 1.15 1.6 0.