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IL66B - PHOTODARLINGTON OPTOCOUPLER

Description

The IL66B is an optically coupled isolator employing a Gallium Arsenide infrared emitter and a silicon photodarlington detector.

Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits.

Features

  • Internal RBE for High Stability.
  • High Current Transfer Ratio at IF=2 mA, VCE=5 V IL66B-1, 200% min. IL66B-2, 750% min.
  • Withstand Test Voltage, 5300 VACRMS.
  • No Base Connection.
  • High Isolation Resistance.
  • Standard Plastic DIP Package.
  • Underwriters Lab Approval #E52744 V.
  • VDE 0884 Available with Option 1 D E Dimensions in inches (mm) 3 2 1 pin one ID. .248 (6.30) .256 (6.50) Anode 1 Cathode 2 NC 3 6 NC 5 Collector 4 Emitter.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
IL66 PHOTODARLINGTON OPTOCOUPLER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IL66B PHOTODARLINGTON OPTOCOUPLER FEATURES • Internal RBE for High Stability • High Current Transfer Ratio at IF=2 mA, VCE=5 V IL66B-1, 200% min. IL66B-2, 750% min. • Withstand Test Voltage, 5300 VACRMS • No Base Connection • High Isolation Resistance • Standard Plastic DIP Package • Underwriters Lab Approval #E52744 V • VDE 0884 Available with Option 1 D E Dimensions in inches (mm) 3 2 1 pin one ID. .248 (6.30) .256 (6.50) Anode 1 Cathode 2 NC 3 6 NC 5 Collector 4 Emitter 4 5 .335 (8.50) .343 (8.70) .039 (1.00) min. 6 .300 (7.62) typ. .130 (3.30) .138 (3.50) DESCRIPTION The IL66B is an optically coupled isolator employing a Gallium Arsenide infrared emitter and a silicon photodarlington detector.
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