Datasheet Details
| Part number | HYB3165165T-60 |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| File Size | 391.33 KB |
| Description | 4M x 16-Bit Dynamic RAM |
| Datasheet |
 HYB3165165T-60_SiemensSemiconductorGroup.pdf
|
| Part number | HYB3165165T-60 |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| File Size | 391.33 KB |
| Description | 4M x 16-Bit Dynamic RAM |
| Datasheet |
HYB3165165T-60_SiemensSemiconductorGroup.pdf
|
EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O16 UCAS, LCAS WRITE Vcc Vss Address Inputs for HYB 3164165T(L) Address Inputs for HYB 3165165T(L) Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply ( + 3.3V) Ground Semicond
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