Description
3.3 V 50 ns 256 Kx16 EDO-DRAM 3.3 V 55 ns 256 Kx16 EDO-DRAM 3.3 V 60 ns 256 Kx16 EDO-DRAM 3.3 V 50 ns 256 Kx16 EDO- DRAM 3.3 V 55 ns 256 Kx16 EDO- DRAM 3.3 V 60 ns 256 Kx16 EDO-DRAM
Pin Names A0-A8 RAS UCAS, LCAS WE OE I/O1
I/O16 Address Inputs Row Address Strobe Column Address Strobe Read/Write Input Output Enable Data Input/Output Power Supply (+ 3.3 V) Ground (0 V) No Connection
VCC VSS
N.C.Semiconductor Group
2
HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAM
Pin Configur
Features
- include Self Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Semiconductor Group
1
7.96
HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAM
Ordering Information Type HYB 314175BJ-50 HYB 314175BJ-55 HYB 314175BJ-60 HYB 314175BJL-50 HYB 314175BJL-55 HYB 314175BJL-60 Truth Table RAS H L L L L L L L L LCAS H H L H L L H L L UCAS H H H L L H L L L WE H H H H H L L L H OE H H L L L H H H H I/O1-I/O8 High-Z High-Z Dout Hig.