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HYB314175BJL-50, HYB-314 - 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

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This datasheet PDF includes multiple part numbers: HYB314175BJL-50, HYB-314. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HYB314175BJL-50, HYB-314
Manufacturer Siemens Semiconductor Group
File Size 1.28 MB
Description 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
Datasheet download datasheet HYB-314-175.pdf
Note This datasheet PDF includes multiple part numbers: HYB314175BJL-50, HYB-314.
Please refer to the document for exact specifications by model.

HYB314175BJL-50 Product details

Description

3.3 V 50 ns 256 Kx16 EDO-DRAM 3.3 V 55 ns 256 Kx16 EDO-DRAM 3.3 V 60 ns 256 Kx16 EDO-DRAM 3.3 V 50 ns 256 Kx16 EDO- DRAM 3.3 V 55 ns 256 Kx16 EDO- DRAM 3.3 V 60 ns 256 Kx16 EDO-DRAM Pin Names A0-A8 RAS UCAS, LCAS WE OE I/O1 I/O16 Address Inputs Row Address Strobe Column Address Strobe Read/Write Input Output Enable Data Input/Output Power Supply (+ 3.3 V) Ground (0 V) No Connection VCC VSS N.C.Semiconductor Group 2 HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAM Pin Configur

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