CFY30 Datasheet (Siemens Semiconductor Group) - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

CFY30, GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet Low noise ( Fmin = 1.4 dB @ 4 GHz ) High gain ( 11.5 dB typ.

@ 4 GHz ) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape