Datasheet4U Logo Datasheet4U.com

BUZ357 Datasheet - Siemens Semiconductor Group

BUZ357 Power Transistor

BUZ 357 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 357 VDS 1000 V ID 5.1 A RDS(on) 2Ω Package TO-218 AA Ordering Code C67078-S3110-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 5.1 Unit A ID IDpuls 20 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 5.1 18 .

BUZ357 Datasheet (68.99 KB)

Preview of BUZ357 PDF
BUZ357 Datasheet Preview Page 2 BUZ357 Datasheet Preview Page 3

Datasheet Details

Part number:

BUZ357

Manufacturer:

Siemens Semiconductor Group

File Size:

68.99 KB

Description:

Power transistor.

📁 Related Datasheet

BUZ35 Power Transistor (Siemens Semiconductor Group)

BUZ35 N-Channel MOSFET (INCHANGE)

BUZ350 Power Transistor (Siemens Semiconductor Group)

BUZ350 Power Transistor (Infineon Technologies AG)

BUZ351 Power Transistor (Siemens Semiconductor Group)

BUZ351 N-Channel Power MOSFET (Intersil Corporation)

BUZ353 Power Transistor (Siemens Semiconductor Group)

BUZ353 N-Channel MOSFET (STMicroelectronics)

TAGS

BUZ357 Power Transistor Siemens Semiconductor Group

BUZ357 Distributor