Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
Features
- Overload protection.
- Current limitation.
- Short circuit protection.
- Thermal shutdown.
- Overvoltage protection (including load dump).
- Reverse battery protection1).
- Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
- Open drain diagnostic output.
- Open load detection in ON-state.
- CMOS compatible input.
- Loss of ground and loss of Vbb protection.
- Electrostatic discharge (ESD).
BTS610L1_SiemensSemiconductorGroup.pdf